Contact reaction between Si and rare earth metals

R. D. Thompson*, B. Y. Tsaur, King-Ning Tu

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156 引文 斯高帕斯(Scopus)

摘要

Reactions between Si and thin films of rare-earth metals (Gd, Dy, Ho, Er, plus Y and La) in the temperature range of 275-900°C have been studied by using x-ray diffraction and ion backscattering spectrometry. The disilicides of these metals are apparently the first phase to form, forming rapidly within a narrow temperature range (325-400°C), and are stable up to 900°C. The growth does not follow a layered growth mode.

原文English
頁(從 - 到)535-537
頁數3
期刊Applied Physics Letters
38
發行號7
DOIs
出版狀態Published - 1 12月 1981

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