Contact for shallow junctions

King-Ning Tu*

*此作品的通信作者

研究成果: Article同行評審

4 引文 斯高帕斯(Scopus)

摘要

A brief review of the formation process and Schottky behavior of shallow silicide contacts is presented. Both silicon alloys and refractory metal alloys have been explored for shallow silicide formation, and both high (0.85-0.75 eV) and low (0.50-0.40 eV) Schottky contacts have been demonstrated.

原文English
頁(從 - 到)71-78
頁數8
期刊Thin Solid Films
140
發行號1
DOIs
出版狀態Published - 16 6月 1986

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