Contact Engineering of Trilayer Black Phosphorus With Scandium and Gold

Yi-Chia Tsai, Blanka Magyari-Kope, Yi-Ming Li*, Seiji Samukawa, Yoshio Nishi, Simon M. Sze


研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)


High contact resistance keeps black phosphorus (BP) from fully wielding its excellent material property. Using first-principles calculations, we analyze the interfacial binding behavior and the impact of binding on the other layers of a trilayer BP. We found that the interfacial charge density and charge transfer of Scandium (Sc)-contacted trilayer BP are 2.67 and 3.29 times greater than Au-contacted trilayer BP, respectively. Moreover, the interfacial tunneling barrier height and width of Sc-contacted trilayer BP are 0 eV and 1.851 angstrom, which are significantly smaller than that of 5.1 eV and 2.447 angstrom observed in Au-contacted trilayer BP. All these facts suggest a strong bonding and efficient carrier transmission between Sc contact and trilayer BP substrate. Therefore, we conclude that the Sc electrode can lead to a superior performance that is consistent with the experiment.

頁(從 - 到)322-328
期刊IEEE Journal of the Electron Devices Society
出版狀態Published - 4 2月 2019


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