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Conductive bridge random access memory characteristics of SiCN based transparent device due to indium diffusion
Dayanand Kumar, Rakesh Aluguri, Umesh Chand, Tseung-Yuen Tseng
電子研究所
研究成果
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26
引文 斯高帕斯(Scopus)
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Keyphrases
Storage Characteristics
100%
TiCN
100%
Transparent Devices
100%
Conductive Bridging Random Access Memory (CBRAM)
100%
Indium Diffusion
100%
Resistive Switching
80%
SiCN Films
60%
Zirconium Dioxide
40%
Top Electrode
40%
Visible Spectrum
20%
Bottom Electrode
20%
Secondary Ion Mass Spectrometry
20%
Energy Dispersive X-ray Spectroscopy
20%
ZrO2 Films
20%
Memory Application
20%
Non-volatile Memory
20%
Long-term Retention
20%
Wavelength Regions
20%
Bipolar Resistive Switching
20%
Resistance Ratio
20%
Positive-sequence Voltage
20%
High On-off Ratio
20%
Oxygen Vacancy Filament
20%
Material Science
Film
100%
Indium
100%
Indium Tin Oxide
100%
Zirconia
75%
Oxygen Vacancy
25%
Secondary Ion Mass Spectrometry
25%