Conduction mechanisms for off-state leakage current of Schottky barrier thin-film transistors

Kuan Lin Yeh*, Horng-Chih Lin, Rou Gu Huang, Ren Wei Tsai, Tiao Yuan Huang

*此作品的通信作者

研究成果: Article同行評審

6 引文 斯高帕斯(Scopus)

摘要

Conduction mechanisms for the off-state leakage in Schottky barrier thin-film transistor were explored. It was found that the field-emission process dominates the leakage conduction of the device with the conventional structure as the field strength in the drain junction becomes high, and results in the strong gate-induced drain leakage (GIDL) like phenomenon. In contrast, for the device with a field-induced-drain structure, the high-field region is pulled away from the silicided drain. As a result, the field-emission conduction is eliminated, so the GIDL-like leakage current is effectively suppressed.

原文English
頁(從 - 到)635-637
頁數3
期刊Applied Physics Letters
79
發行號5
DOIs
出版狀態Published - 30 7月 2001

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