Conduction behavior of V-SrZrO 3 thin film showing resistive switching

Chun Hung Lai*, Chih Yi Liu, Tseung-Yuen Tseng

*此作品的通信作者

    研究成果: Conference article同行評審

    3 引文 斯高帕斯(Scopus)

    摘要

    This paper examines the electrical properties of V-doped SrZrO3 sputtered films showing bistable on/off resistive switching. The temperature dependence of dc sweep I-V data in the range of 25-100°C implies the prominent role played by the off-state conduction in determining the R-switch ratio. The defects in off-state are investigated via Frenkel-Poole relation and the associated trap energy extraction. It is found that the oxygen vacancies are the possible major defects in off-state and are verified by the treatment of N2 and O2 annealing ambience hereafter. The nearly unchanged currents suggest the relatively more stable nature in on-state, which is consistent with the following findings: 1) the frequently observed I-V jiggle during on to off switching, 2) successful forming only found for sweep direction to on-state, 3) the better thermal disturbance immunity by longer retention for on-state, 4) the shorter pulse width needed to on-state switching for electric pulse induced resistance (EPIR) effect.

    原文English
    頁(從 - 到)21-26
    頁數6
    期刊Ferroelectrics
    385
    發行號1 PART 6
    DOIs
    出版狀態Published - 1 12月 2009
    事件6th Asian Meeting on Ferroelectrics, AMF-6 - Taipei, Taiwan
    持續時間: 2 8月 20086 8月 2008

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