@inproceedings{5b6f209a7b6b4d0e970d13035fe5c67c,
title = "Conductance mapping for the electron and hole energy levels in InAs/GaAs self-assembled quantum dots",
abstract = "The authors study admittance spectroscopy of the electron and hole levels in InAs/GaAs self-assembled quantum dots. From the conductance mapping for the electron and hole levels in dots, clear s-and p-shell structures can be resolved.",
keywords = "Charge carrier processes, Diodes, Electrons, Energy states, Gallium arsenide, Quantum dot lasers, Quantum dots, Spectroscopy, Tunneling, US Department of Transportation",
author = "Wen-Hao Chang and Hsu, {Tzu Min} and Chen, {Wen Yen} and Chang, {Hsiang Szu} and Yeh, {Nien Tzu} and Chyi, {Jen Inn}",
note = "Publisher Copyright: {\textcopyright} 2003 IEEE.; 2003 International Symposium on Compound Semiconductors, ISCS 2003 ; Conference date: 25-08-2003 Through 27-08-2003",
year = "2003",
doi = "10.1109/ISCS.2003.1239921",
language = "English",
series = "IEEE International Symposium on Compound Semiconductors, Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "93--94",
booktitle = "2003 International Symposium on Compound Semiconductors, ISCS 2003",
address = "美國",
}