摘要
We compare the collection of α-particle generated charge by collectors surrounded by either uniform reflecting or uniform absorbing surfaces as to two extreme cases of any real condition in IC's. The comparison for varying α-particle energies and collector sizes indicates that the differences in collected charge for the two cases is less than a factor of two if the α-particle strike is through the center of the collector. We show that the variation of collected charge with feature length is approximately linear in both cases. The effect of scaling on soft errors in static RAM's is discussed. It is assumed that the charge transport is by diffusion only.
原文 | English |
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頁(從 - 到) | 15-18 |
頁數 | 4 |
期刊 | Solid State Electronics |
卷 | 26 |
發行號 | 1 |
DOIs | |
出版狀態 | Published - 1 1月 1983 |