Comprehensive Study on Dynamic on-resistance Evaluation Circuit for Power GaN HEMTs Devices

Gallium nitride (GaN) based power devices are promising technology for power electronic circuits to achieve high operating frequency, low conduction loss, and zero reverse recovery loss. However, these devices suffer from the dynamic on-resistance (Rds, on) in the application. To investigate this issue, several test circuits are discussed in the literature. In this paper, a summary and their limitation on testing parameters during Rds, on evaluation are discussed. The test circuits are further analyzed based on their switching stress to the device under test (DUT). This analysis may provide insight for test engineers to choose the test circuit based on their requirements quickly, and researchers interested in this topic will have the state-of-the-art circuits from this paper.