Comprehensive Study on Dynamic on-resistance Evaluation Circuit for Power GaN HEMTs Devices

Rustam Kumar, Suvendu Samanta, Tian Li Wu

研究成果: Conference contribution同行評審

摘要

Gallium nitride (GaN) based power devices are promising technology for power electronic circuits to achieve high operating frequency, low conduction loss, and zero reverse recovery loss. However, these devices suffer from the dynamic on-resistance (Rds, on) in the application. To investigate this issue, several test circuits are discussed in the literature. In this paper, a summary and their limitation on testing parameters during Rds, on evaluation are discussed. The test circuits are further analyzed based on their switching stress to the device under test (DUT). This analysis may provide insight for test engineers to choose the test circuit based on their requirements quickly, and researchers interested in this topic will have the state-of-the-art circuits from this paper.

原文English
主出版物標題IECON 2022 - 48th Annual Conference of the IEEE Industrial Electronics Society
發行者IEEE Computer Society
ISBN(電子)9781665480253
DOIs
出版狀態Published - 2022
事件48th Annual Conference of the IEEE Industrial Electronics Society, IECON 2022 - Brussels, Belgium
持續時間: 17 10月 202220 10月 2022

出版系列

名字IECON Proceedings (Industrial Electronics Conference)
2022-October
ISSN(列印)2162-4704
ISSN(電子)2577-1647

Conference

Conference48th Annual Conference of the IEEE Industrial Electronics Society, IECON 2022
國家/地區Belgium
城市Brussels
期間17/10/2220/10/22

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