TY - GEN
T1 - Comprehensive Study on Dynamic on-resistance Evaluation Circuit for Power GaN HEMTs Devices
AU - Kumar, Rustam
AU - Samanta, Suvendu
AU - Wu, Tian Li
N1 - Publisher Copyright:
© 2022 IEEE.
PY - 2022
Y1 - 2022
N2 - Gallium nitride (GaN) based power devices are promising technology for power electronic circuits to achieve high operating frequency, low conduction loss, and zero reverse recovery loss. However, these devices suffer from the dynamic on-resistance (Rds, on) in the application. To investigate this issue, several test circuits are discussed in the literature. In this paper, a summary and their limitation on testing parameters during Rds, on evaluation are discussed. The test circuits are further analyzed based on their switching stress to the device under test (DUT). This analysis may provide insight for test engineers to choose the test circuit based on their requirements quickly, and researchers interested in this topic will have the state-of-the-art circuits from this paper.
AB - Gallium nitride (GaN) based power devices are promising technology for power electronic circuits to achieve high operating frequency, low conduction loss, and zero reverse recovery loss. However, these devices suffer from the dynamic on-resistance (Rds, on) in the application. To investigate this issue, several test circuits are discussed in the literature. In this paper, a summary and their limitation on testing parameters during Rds, on evaluation are discussed. The test circuits are further analyzed based on their switching stress to the device under test (DUT). This analysis may provide insight for test engineers to choose the test circuit based on their requirements quickly, and researchers interested in this topic will have the state-of-the-art circuits from this paper.
KW - Dynamic R
KW - gallium nitride (GaN)
KW - hard-switching
KW - hot-electron trapping
KW - testing circuit
UR - http://www.scopus.com/inward/record.url?scp=85143912349&partnerID=8YFLogxK
U2 - 10.1109/IECON49645.2022.9969020
DO - 10.1109/IECON49645.2022.9969020
M3 - Conference contribution
AN - SCOPUS:85143912349
T3 - IECON Proceedings (Industrial Electronics Conference)
BT - IECON 2022 - 48th Annual Conference of the IEEE Industrial Electronics Society
PB - IEEE Computer Society
T2 - 48th Annual Conference of the IEEE Industrial Electronics Society, IECON 2022
Y2 - 17 October 2022 through 20 October 2022
ER -