Comprehensive study on a novel bidirectional tunneling program/erase NOR-type (BiNOR) 3-D flash memory cell

Amy Hsiu Fen Chou; Evans Ching Song Yang; Cheng Jye Liu; Hsiu Hsiang Pong; Ming Chi Liaw; Tien-Sheng Chao; Ya Chin King; Huey Liang Hwang; Charles Ching Hsiang Hsu

doi:10.1109/16.930656

Comprehensive study on a novel bidirectional tunneling program/erase NOR-type (BiNOR) 3-D flash memory cell

Amy Hsiu Fen Chou^*, Evans Ching Song Yang, Cheng Jye Liu, Hsiu Hsiang Pong, Ming Chi Liaw, Tien-Sheng Chao, Ya Chin King, Huey Liang Hwang, Charles Ching Hsiang Hsu

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電子物理學系

研究成果: Article › 同行評審

3 引文斯高帕斯（Scopus）

摘要

In this paper, a recently proposed bidirectional tunneling program/erase (P/E) NOR-type (BiNOR) flash memory is extensively investigated. With the designated localized p-well structure, uniform Fowler-Nordheim (FN) tunneling is first fulfilled for both program and erase operations in NOR-type array architecture to facilitate low power applications. The BiNOR flash memory guarantees excellent tunnel oxide reliability and is provided with fast random access capability. Furthermore, a three-dimensional (3-D) current path in addition to the conventional two-dimensional (2-D) conduction is proven to improve the read performance. The BiNOR flash memory is thus promising for low-power, high-speed, and high-reliability nonvolatile memory applications.

原文	English
頁（從 - 到）	1386-1393
頁數	8
期刊	IEEE Transactions on Electron Devices
卷	48
發行號	7
DOIs	https://doi.org/10.1109/16.930656
出版狀態	Published - 1 7月 2001

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title = "Comprehensive study on a novel bidirectional tunneling program/erase NOR-type (BiNOR) 3-D flash memory cell",

abstract = "In this paper, a recently proposed bidirectional tunneling program/erase (P/E) NOR-type (BiNOR) flash memory is extensively investigated. With the designated localized p-well structure, uniform Fowler-Nordheim (FN) tunneling is first fulfilled for both program and erase operations in NOR-type array architecture to facilitate low power applications. The BiNOR flash memory guarantees excellent tunnel oxide reliability and is provided with fast random access capability. Furthermore, a three-dimensional (3-D) current path in addition to the conventional two-dimensional (2-D) conduction is proven to improve the read performance. The BiNOR flash memory is thus promising for low-power, high-speed, and high-reliability nonvolatile memory applications.",

keywords = "Flash memory, Fowler-Nordheim(FN)tunneling, Nonvolatile memory",

author = "Chou, {Amy Hsiu Fen} and Yang, {Evans Ching Song} and Liu, {Cheng Jye} and Pong, {Hsiu Hsiang} and Liaw, {Ming Chi} and Tien-Sheng Chao and King, {Ya Chin} and Hwang, {Huey Liang} and Hsu, {Charles Ching Hsiang}",

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AU - Chou, Amy Hsiu Fen

AU - Yang, Evans Ching Song

AU - Liu, Cheng Jye

AU - Pong, Hsiu Hsiang

AU - Liaw, Ming Chi

AU - Chao, Tien-Sheng

AU - King, Ya Chin

AU - Hwang, Huey Liang

AU - Hsu, Charles Ching Hsiang

PY - 2001/7/1

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N2 - In this paper, a recently proposed bidirectional tunneling program/erase (P/E) NOR-type (BiNOR) flash memory is extensively investigated. With the designated localized p-well structure, uniform Fowler-Nordheim (FN) tunneling is first fulfilled for both program and erase operations in NOR-type array architecture to facilitate low power applications. The BiNOR flash memory guarantees excellent tunnel oxide reliability and is provided with fast random access capability. Furthermore, a three-dimensional (3-D) current path in addition to the conventional two-dimensional (2-D) conduction is proven to improve the read performance. The BiNOR flash memory is thus promising for low-power, high-speed, and high-reliability nonvolatile memory applications.

AB - In this paper, a recently proposed bidirectional tunneling program/erase (P/E) NOR-type (BiNOR) flash memory is extensively investigated. With the designated localized p-well structure, uniform Fowler-Nordheim (FN) tunneling is first fulfilled for both program and erase operations in NOR-type array architecture to facilitate low power applications. The BiNOR flash memory guarantees excellent tunnel oxide reliability and is provided with fast random access capability. Furthermore, a three-dimensional (3-D) current path in addition to the conventional two-dimensional (2-D) conduction is proven to improve the read performance. The BiNOR flash memory is thus promising for low-power, high-speed, and high-reliability nonvolatile memory applications.

KW - Flash memory

KW - Fowler-Nordheim(FN)tunneling

KW - Nonvolatile memory

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Comprehensive study on a novel bidirectional tunneling program/erase NOR-type (BiNOR) 3-D flash memory cell

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