Comprehensive Study of Contact Length Scaling Down to 12 nm With Monolayer MoS2 Channel Transistors

Wen Chia Wu, Terry Y.T. Hung*, D. Mahaveer Sathaiya, Goutham Arutchelvan, Chen Feng Hsu, Sheng Kai Su, Ang Sheng Chou, Edward Chen, Yun Yang Shen, San Lin Liew, Vincent Hou, T. Y. Lee, Jin Cai, Chung Cheng Wu, Jeff Wu, H. S. Philip Wong, Chao Ching Cheng, Wen Hao Chang, Iuliana P. Radu, Chao Hsin Chien


研究成果: Article同行評審


The 2-D transition metal dichalcogenides (2-D TMDs) have emerged as a promising channel material for postsilicon applications for their ultrathin structure and excellent electrostatic control. However, achieving low contact resistance at scaled contact length remains a challenge. This article overcomes this challenge through optimized deposition of a semimetal/metal stack in monolayer MoS2 channel transistors and obtains a low contact resistance of ∼300 Ω · μm at an extreme contact length of 12 nm at carrier concentration around 1013 cm-2 (based on the best data from transmission line measurement extraction). Similar ON-currents are maintained across a range of contact lengths from 1000 to 12 nm. Our calibrated TCAD model also validates that the tunneling distance at the metal-CTMD interface exhibits a strongest positive correlation to the contact resistance. Doping in contact is then proposed and simulated as a potential solution for achieving a target corner of contact resistance and contact length defined by the International Roadmap for Devices and Systems (IRDS) for 2037.

頁(從 - 到)6680-6686
期刊IEEE Transactions on Electron Devices
出版狀態Published - 1 12月 2023


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