Comprehensive Physics Based TCAD Model for 2D MX2Channel Transistors

D. Mahaveer Sathaiya*, Terry Y.T. Hung, Edward Chen, Wen Chia Wu, Aslan Wei, Chih Piao Chuu, Sheng Kai Su, Ang Sheng Chou, Cheng Ting Chung, Chao Hsin Chien, Han Wang, Jin Cai, Chung Cheng Wu, Iuliana P. Radu, Jeff Wu

*此作品的通信作者

研究成果: Conference contribution同行評審

3 引文 斯高帕斯(Scopus)

摘要

For the first time, a comprehensive TCAD model is developed to unambiguously extract key device parameters: contact resistance (Rc), channel mobility (μCH), Schottky barrier height (SBH), & Dit from experimental data on back-gate (BG) transistors with MX2 channel. The model is tested and validated against three different data sets with different contact metal, quality of channel, contact, and interfaces. Using model's output, we analyze the accuracy of Rc and μCH extracted by the TLM method and provide guidance on the limits of its applicability. Finally, the model is used to project contact requirements (SBH 0eV, high doping density >2e13cm-2) for performant, scaled transistors with 2D material channel in stacked nanosheet configuration.

原文English
主出版物標題2022 International Electron Devices Meeting, IEDM 2022
發行者Institute of Electrical and Electronics Engineers Inc.
頁面2841-2844
頁數4
ISBN(電子)9781665489591
DOIs
出版狀態Published - 2022
事件2022 International Electron Devices Meeting, IEDM 2022 - San Francisco, United States
持續時間: 3 12月 20227 12月 2022

出版系列

名字Technical Digest - International Electron Devices Meeting, IEDM
2022-December
ISSN(列印)0163-1918

Conference

Conference2022 International Electron Devices Meeting, IEDM 2022
國家/地區United States
城市San Francisco
期間3/12/227/12/22

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