Comprehensive Physics Based TCAD Model for 2D MX2Channel Transistors

D. Mahaveer Sathaiya; Terry Y.T. Hung; Edward Chen; Wen Chia Wu; Aslan Wei; Chih Piao Chuu; Sheng Kai Su; Ang Sheng Chou; Cheng Ting Chung; Chao Hsin Chien; Han Wang; Jin Cai; Chung Cheng Wu; Iuliana P. Radu; Jeff Wu

doi:10.1109/IEDM45625.2022.10019446

Comprehensive Physics Based TCAD Model for 2D MX₂Channel Transistors

D. Mahaveer Sathaiya^*, Terry Y.T. Hung, Edward Chen, Wen Chia Wu, Aslan Wei, Chih Piao Chuu, Sheng Kai Su, Ang Sheng Chou, Cheng Ting Chung, Chao Hsin Chien, Han Wang, Jin Cai, Chung Cheng Wu, Iuliana P. Radu, Jeff Wu

^*此作品的通信作者

研究成果: Conference contribution › 同行評審

7 引文斯高帕斯（Scopus）

摘要

For the first time, a comprehensive TCAD model is developed to unambiguously extract key device parameters: contact resistance (Rc), channel mobility (μCH), Schottky barrier height (SBH), & Dit from experimental data on back-gate (BG) transistors with MX2 channel. The model is tested and validated against three different data sets with different contact metal, quality of channel, contact, and interfaces. Using model's output, we analyze the accuracy of Rc and μCH extracted by the TLM method and provide guidance on the limits of its applicability. Finally, the model is used to project contact requirements (SBH 0eV, high doping density >2e13cm-2) for performant, scaled transistors with 2D material channel in stacked nanosheet configuration.

原文	English
主出版物標題	2022 International Electron Devices Meeting, IEDM 2022
發行者	Institute of Electrical and Electronics Engineers Inc.
頁面	2841-2844
頁數	4
ISBN（電子）	9781665489591
DOIs	https://doi.org/10.1109/IEDM45625.2022.10019446
出版狀態	Published - 2022
事件	2022 International Electron Devices Meeting, IEDM 2022 - San Francisco, 美國持續時間: 3 12月 2022 → 7 12月 2022

出版系列

名字	Technical Digest - International Electron Devices Meeting, IEDM
卷	2022-December
ISSN（列印）	0163-1918

Conference

Conference	2022 International Electron Devices Meeting, IEDM 2022
國家/地區	美國
城市	San Francisco
期間	3/12/22 → 7/12/22

存取文件

10.1109/IEDM45625.2022.10019446

其它文件與鏈接

Link to publication in Scopus

引用此

Sathaiya, D. M., Hung, T. Y. T., Chen, E., Wu, W. C., Wei, A., Chuu, C. P., Su, S. K., Chou, A. S., Chung, C. T., Chien, C. H., Wang, H., Cai, J., Wu, C. C., Radu, I. P., & Wu, J. (2022). Comprehensive Physics Based TCAD Model for 2D MX₂Channel Transistors. 於 2022 International Electron Devices Meeting, IEDM 2022 (頁 2841-2844). (Technical Digest - International Electron Devices Meeting, IEDM; 卷 2022-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM45625.2022.10019446

@inproceedings{9e673dd72496408bb9d83a153b875f7e,

title = "Comprehensive Physics Based TCAD Model for 2D MX2Channel Transistors",

abstract = "For the first time, a comprehensive TCAD model is developed to unambiguously extract key device parameters: contact resistance (Rc), channel mobility (μCH), Schottky barrier height (SBH), & Dit from experimental data on back-gate (BG) transistors with MX2 channel. The model is tested and validated against three different data sets with different contact metal, quality of channel, contact, and interfaces. Using model's output, we analyze the accuracy of Rc and μCH extracted by the TLM method and provide guidance on the limits of its applicability. Finally, the model is used to project contact requirements (SBH 0eV, high doping density >2e13cm-2) for performant, scaled transistors with 2D material channel in stacked nanosheet configuration.",

author = "Sathaiya, {D. Mahaveer} and Hung, {Terry Y.T.} and Edward Chen and Wu, {Wen Chia} and Aslan Wei and Chuu, {Chih Piao} and Su, {Sheng Kai} and Chou, {Ang Sheng} and Chung, {Cheng Ting} and Chien, {Chao Hsin} and Han Wang and Jin Cai and Wu, {Chung Cheng} and Radu, {Iuliana P.} and Jeff Wu",

note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 International Electron Devices Meeting, IEDM 2022 ; Conference date: 03-12-2022 Through 07-12-2022",

year = "2022",

doi = "10.1109/IEDM45625.2022.10019446",

language = "English",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "2841--2844",

booktitle = "2022 International Electron Devices Meeting, IEDM 2022",

address = "美國",

}

Sathaiya, DM, Hung, TYT, Chen, E, Wu, WC, Wei, A, Chuu, CP, Su, SK, Chou, AS, Chung, CT, Chien, CH, Wang, H, Cai, J, Wu, CC, Radu, IP & Wu, J 2022, Comprehensive Physics Based TCAD Model for 2D MX₂Channel Transistors. 於 2022 International Electron Devices Meeting, IEDM 2022. Technical Digest - International Electron Devices Meeting, IEDM, 卷 2022-December, Institute of Electrical and Electronics Engineers Inc., 頁 2841-2844, 2022 International Electron Devices Meeting, IEDM 2022, San Francisco, 美國, 3/12/22. https://doi.org/10.1109/IEDM45625.2022.10019446

Comprehensive Physics Based TCAD Model for 2D MX₂Channel Transistors. / Sathaiya, D. Mahaveer; Hung, Terry Y.T.; Chen, Edward 等.
2022 International Electron Devices Meeting, IEDM 2022. Institute of Electrical and Electronics Engineers Inc., 2022. p. 2841-2844 (Technical Digest - International Electron Devices Meeting, IEDM; 卷 2022-December).

研究成果: Conference contribution › 同行評審

TY - GEN

T1 - Comprehensive Physics Based TCAD Model for 2D MX2Channel Transistors

AU - Sathaiya, D. Mahaveer

AU - Hung, Terry Y.T.

AU - Chen, Edward

AU - Wu, Wen Chia

AU - Wei, Aslan

AU - Chuu, Chih Piao

AU - Su, Sheng Kai

AU - Chou, Ang Sheng

AU - Chung, Cheng Ting

AU - Chien, Chao Hsin

AU - Wang, Han

AU - Cai, Jin

AU - Wu, Chung Cheng

AU - Radu, Iuliana P.

AU - Wu, Jeff

PY - 2022

Y1 - 2022

N2 - For the first time, a comprehensive TCAD model is developed to unambiguously extract key device parameters: contact resistance (Rc), channel mobility (μCH), Schottky barrier height (SBH), & Dit from experimental data on back-gate (BG) transistors with MX2 channel. The model is tested and validated against three different data sets with different contact metal, quality of channel, contact, and interfaces. Using model's output, we analyze the accuracy of Rc and μCH extracted by the TLM method and provide guidance on the limits of its applicability. Finally, the model is used to project contact requirements (SBH 0eV, high doping density >2e13cm-2) for performant, scaled transistors with 2D material channel in stacked nanosheet configuration.

AB - For the first time, a comprehensive TCAD model is developed to unambiguously extract key device parameters: contact resistance (Rc), channel mobility (μCH), Schottky barrier height (SBH), & Dit from experimental data on back-gate (BG) transistors with MX2 channel. The model is tested and validated against three different data sets with different contact metal, quality of channel, contact, and interfaces. Using model's output, we analyze the accuracy of Rc and μCH extracted by the TLM method and provide guidance on the limits of its applicability. Finally, the model is used to project contact requirements (SBH 0eV, high doping density >2e13cm-2) for performant, scaled transistors with 2D material channel in stacked nanosheet configuration.

UR - http://www.scopus.com/inward/record.url?scp=85147495031&partnerID=8YFLogxK

U2 - 10.1109/IEDM45625.2022.10019446

DO - 10.1109/IEDM45625.2022.10019446

M3 - Conference contribution

AN - SCOPUS:85147495031

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 2841

EP - 2844

BT - 2022 International Electron Devices Meeting, IEDM 2022

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2022 International Electron Devices Meeting, IEDM 2022

Y2 - 3 December 2022 through 7 December 2022

ER -