@inproceedings{cf84877e59614341859bc7d8884f8df3,
title = "Comprehensive Investigations of HBM ESD Robustness for GaN-on-Si RF HEMTs",
abstract = "The paper reports extensive experimental study and simulations to provide an in-depth understanding on the impact of different stress scenarios on ESD robustness of GaNRF HEMTs. These include different terminal combinations, bias configurations, and polarities of human body model (HBM) pulses. The different current discharge paths for each stress scenario play the most vital role in determining its HBM ESD robustness. Transient HBM I-V characteristics have been verified with TCAD simulations which illustrate the on-state gate Schottky diode at high HBM stress voltages contribute to high HBM robustness of the GaN RF HEMTs. The different stress scenarios result in 3 types of HBM failure mechanisms.",
author = "S. Abhinay and Wu, {W. M.} and Shih, {C. A.} and Chen, {S. H.} and A. Sibaja-Hernandez and B. Parvais and U. Peralagu and A. Alian and Tian-Li Wu and Ker, {M. D.} and G. Groeseneken and N. Collaert",
note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 International Electron Devices Meeting, IEDM 2022 ; Conference date: 03-12-2022 Through 07-12-2022",
year = "2022",
doi = "10.1109/IEDM45625.2022.10019357",
language = "English",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "3071--3074",
booktitle = "2022 International Electron Devices Meeting, IEDM 2022",
address = "United States",
}