Comprehensive Investigations of HBM ESD Robustness for GaN-on-Si RF HEMTs

S. Abhinay*, W. M. Wu, C. A. Shih, S. H. Chen, A. Sibaja-Hernandez, B. Parvais, U. Peralagu, A. Alian, Tian-Li Wu, M. D. Ker, G. Groeseneken, N. Collaert

*此作品的通信作者

研究成果: Conference contribution同行評審

2 引文 斯高帕斯(Scopus)

摘要

The paper reports extensive experimental study and simulations to provide an in-depth understanding on the impact of different stress scenarios on ESD robustness of GaNRF HEMTs. These include different terminal combinations, bias configurations, and polarities of human body model (HBM) pulses. The different current discharge paths for each stress scenario play the most vital role in determining its HBM ESD robustness. Transient HBM I-V characteristics have been verified with TCAD simulations which illustrate the on-state gate Schottky diode at high HBM stress voltages contribute to high HBM robustness of the GaN RF HEMTs. The different stress scenarios result in 3 types of HBM failure mechanisms.

原文English
主出版物標題2022 International Electron Devices Meeting, IEDM 2022
發行者Institute of Electrical and Electronics Engineers Inc.
頁面3071-3074
頁數4
ISBN(電子)9781665489591
DOIs
出版狀態Published - 2022
事件2022 International Electron Devices Meeting, IEDM 2022 - San Francisco, United States
持續時間: 3 12月 20227 12月 2022

出版系列

名字Technical Digest - International Electron Devices Meeting, IEDM
2022-December
ISSN(列印)0163-1918

Conference

Conference2022 International Electron Devices Meeting, IEDM 2022
國家/地區United States
城市San Francisco
期間3/12/227/12/22

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