TY - GEN
T1 - Comprehensive Investigation of the Switching Stability in SiC and GaN Power Devices
AU - Tang, Shun Wei
AU - Fan, Chao Ta
AU - Lin, Ming Cheng
AU - Wu, Tian Li
N1 - Publisher Copyright:
© 2022 IEEE.
PY - 2022
Y1 - 2022
N2 - In this work, to the best of our knowledge, it is the first time to report the high-frequency switching stabilities (up to 300kHz) under a 800V of Vds during hard switching (HSW) and zero voltage switching (ZVS) operations in SiC power devices. The switching dependencies, i.e., temperature, frequency, current, and duty cycle, are evaluated based on the proposed topology, showing the flexible design to effectively investigate the circuit-level switching stability. Furthermore, the high-frequency switching stability in GaN power devices is also evaluated for the comparison, indicating that SiC power device shows a better Rdson stability under ZVS and HSW during the high-frequency switching.
AB - In this work, to the best of our knowledge, it is the first time to report the high-frequency switching stabilities (up to 300kHz) under a 800V of Vds during hard switching (HSW) and zero voltage switching (ZVS) operations in SiC power devices. The switching dependencies, i.e., temperature, frequency, current, and duty cycle, are evaluated based on the proposed topology, showing the flexible design to effectively investigate the circuit-level switching stability. Furthermore, the high-frequency switching stability in GaN power devices is also evaluated for the comparison, indicating that SiC power device shows a better Rdson stability under ZVS and HSW during the high-frequency switching.
KW - Switching stability
KW - dynamic R
KW - hard switching
KW - power devices
KW - zero voltage switching
UR - http://www.scopus.com/inward/record.url?scp=85140917426&partnerID=8YFLogxK
U2 - 10.1109/IPFA55383.2022.9915772
DO - 10.1109/IPFA55383.2022.9915772
M3 - Conference contribution
AN - SCOPUS:85140917426
T3 - Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
BT - 2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2022
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2022
Y2 - 18 July 2022 through 21 July 2022
ER -