Comprehensive Investigation of the Switching Stability in SiC and GaN Power Devices

Shun Wei Tang; Chao Ta Fan; Ming Cheng Lin; Tian Li Wu

doi:10.1109/IPFA55383.2022.9915772

Comprehensive Investigation of the Switching Stability in SiC and GaN Power Devices

Shun Wei Tang, Chao Ta Fan, Ming Cheng Lin, Tian Li Wu^*

^*此作品的通信作者

研究成果: Conference contribution › 同行評審

1 引文斯高帕斯（Scopus）

摘要

In this work, to the best of our knowledge, it is the first time to report the high-frequency switching stabilities (up to 300kHz) under a 800V of Vds during hard switching (HSW) and zero voltage switching (ZVS) operations in SiC power devices. The switching dependencies, i.e., temperature, frequency, current, and duty cycle, are evaluated based on the proposed topology, showing the flexible design to effectively investigate the circuit-level switching stability. Furthermore, the high-frequency switching stability in GaN power devices is also evaluated for the comparison, indicating that SiC power device shows a better Rdson stability under ZVS and HSW during the high-frequency switching.

原文	English
主出版物標題	2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2022
發行者	Institute of Electrical and Electronics Engineers Inc.
ISBN（電子）	9781665498159
DOIs	https://doi.org/10.1109/IPFA55383.2022.9915772
出版狀態	Published - 2022
事件	2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2022 - Singapore, 新加坡持續時間: 18 7月 2022 → 21 7月 2022

出版系列

名字	Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
卷	2022-July

Conference

Conference	2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2022
國家/地區	新加坡
城市	Singapore
期間	18/07/22 → 21/07/22

存取文件

10.1109/IPFA55383.2022.9915772

其它文件與鏈接

Link to publication in Scopus

引用此

Tang, S. W., Fan, C. T., Lin, M. C., & Wu, T. L. (2022). Comprehensive Investigation of the Switching Stability in SiC and GaN Power Devices. 於 2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2022 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA; 卷 2022-July). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IPFA55383.2022.9915772

Tang, Shun Wei ; Fan, Chao Ta ; Lin, Ming Cheng 等. / Comprehensive Investigation of the Switching Stability in SiC and GaN Power Devices. 2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2022. Institute of Electrical and Electronics Engineers Inc., 2022. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA).

@inproceedings{be7619da78cf4688befd7208500ece55,

title = "Comprehensive Investigation of the Switching Stability in SiC and GaN Power Devices",

abstract = "In this work, to the best of our knowledge, it is the first time to report the high-frequency switching stabilities (up to 300kHz) under a 800V of Vds during hard switching (HSW) and zero voltage switching (ZVS) operations in SiC power devices. The switching dependencies, i.e., temperature, frequency, current, and duty cycle, are evaluated based on the proposed topology, showing the flexible design to effectively investigate the circuit-level switching stability. Furthermore, the high-frequency switching stability in GaN power devices is also evaluated for the comparison, indicating that SiC power device shows a better Rdson stability under ZVS and HSW during the high-frequency switching.",

keywords = "Switching stability, dynamic R, hard switching, power devices, zero voltage switching",

author = "Tang, {Shun Wei} and Fan, {Chao Ta} and Lin, {Ming Cheng} and Wu, {Tian Li}",

note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2022 ; Conference date: 18-07-2022 Through 21-07-2022",

year = "2022",

doi = "10.1109/IPFA55383.2022.9915772",

language = "English",

series = "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2022",

address = "美國",

}

Tang, SW, Fan, CT, Lin, MC & Wu, TL 2022, Comprehensive Investigation of the Switching Stability in SiC and GaN Power Devices. 於 2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2022. Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, 卷 2022-July, Institute of Electrical and Electronics Engineers Inc., 2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2022, Singapore, 新加坡, 18/07/22. https://doi.org/10.1109/IPFA55383.2022.9915772

Comprehensive Investigation of the Switching Stability in SiC and GaN Power Devices. / Tang, Shun Wei; Fan, Chao Ta; Lin, Ming Cheng 等.
2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2022. Institute of Electrical and Electronics Engineers Inc., 2022. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA; 卷 2022-July).

研究成果: Conference contribution › 同行評審

TY - GEN

T1 - Comprehensive Investigation of the Switching Stability in SiC and GaN Power Devices

AU - Tang, Shun Wei

AU - Fan, Chao Ta

AU - Lin, Ming Cheng

AU - Wu, Tian Li

PY - 2022

Y1 - 2022

N2 - In this work, to the best of our knowledge, it is the first time to report the high-frequency switching stabilities (up to 300kHz) under a 800V of Vds during hard switching (HSW) and zero voltage switching (ZVS) operations in SiC power devices. The switching dependencies, i.e., temperature, frequency, current, and duty cycle, are evaluated based on the proposed topology, showing the flexible design to effectively investigate the circuit-level switching stability. Furthermore, the high-frequency switching stability in GaN power devices is also evaluated for the comparison, indicating that SiC power device shows a better Rdson stability under ZVS and HSW during the high-frequency switching.

AB - In this work, to the best of our knowledge, it is the first time to report the high-frequency switching stabilities (up to 300kHz) under a 800V of Vds during hard switching (HSW) and zero voltage switching (ZVS) operations in SiC power devices. The switching dependencies, i.e., temperature, frequency, current, and duty cycle, are evaluated based on the proposed topology, showing the flexible design to effectively investigate the circuit-level switching stability. Furthermore, the high-frequency switching stability in GaN power devices is also evaluated for the comparison, indicating that SiC power device shows a better Rdson stability under ZVS and HSW during the high-frequency switching.

KW - Switching stability

KW - dynamic R

KW - hard switching

KW - power devices

KW - zero voltage switching

UR - http://www.scopus.com/inward/record.url?scp=85140917426&partnerID=8YFLogxK

U2 - 10.1109/IPFA55383.2022.9915772

DO - 10.1109/IPFA55383.2022.9915772

M3 - Conference contribution

AN - SCOPUS:85140917426

T3 - Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

BT - 2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2022

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2022

Y2 - 18 July 2022 through 21 July 2022

ER -

Tang SW, Fan CT, Lin MC, Wu TL. Comprehensive Investigation of the Switching Stability in SiC and GaN Power Devices. 於 2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2022. Institute of Electrical and Electronics Engineers Inc. 2022. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). doi: 10.1109/IPFA55383.2022.9915772

Comprehensive Investigation of the Switching Stability in SiC and GaN Power Devices

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