Comprehensive Investigation of the Switching Stability in SiC and GaN Power Devices

Shun Wei Tang, Chao Ta Fan, Ming Cheng Lin, Tian Li Wu*

*此作品的通信作者

研究成果: Conference contribution同行評審

1 引文 斯高帕斯(Scopus)

摘要

In this work, to the best of our knowledge, it is the first time to report the high-frequency switching stabilities (up to 300kHz) under a 800V of Vds during hard switching (HSW) and zero voltage switching (ZVS) operations in SiC power devices. The switching dependencies, i.e., temperature, frequency, current, and duty cycle, are evaluated based on the proposed topology, showing the flexible design to effectively investigate the circuit-level switching stability. Furthermore, the high-frequency switching stability in GaN power devices is also evaluated for the comparison, indicating that SiC power device shows a better Rdson stability under ZVS and HSW during the high-frequency switching.

原文English
主出版物標題2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2022
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9781665498159
DOIs
出版狀態Published - 2022
事件2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2022 - Singapore, Singapore
持續時間: 18 7月 202221 7月 2022

出版系列

名字Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
2022-July

Conference

Conference2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2022
國家/地區Singapore
城市Singapore
期間18/07/2221/07/22

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