@inproceedings{be7619da78cf4688befd7208500ece55,
title = "Comprehensive Investigation of the Switching Stability in SiC and GaN Power Devices",
abstract = "In this work, to the best of our knowledge, it is the first time to report the high-frequency switching stabilities (up to 300kHz) under a 800V of Vds during hard switching (HSW) and zero voltage switching (ZVS) operations in SiC power devices. The switching dependencies, i.e., temperature, frequency, current, and duty cycle, are evaluated based on the proposed topology, showing the flexible design to effectively investigate the circuit-level switching stability. Furthermore, the high-frequency switching stability in GaN power devices is also evaluated for the comparison, indicating that SiC power device shows a better Rdson stability under ZVS and HSW during the high-frequency switching.",
keywords = "dynamic R, hard switching, power devices, Switching stability, zero voltage switching",
author = "Tang, {Shun Wei} and Fan, {Chao Ta} and Lin, {Ming Cheng} and Wu, {Tian Li}",
note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2022 ; Conference date: 18-07-2022 Through 21-07-2022",
year = "2022",
doi = "10.1109/IPFA55383.2022.9915772",
language = "English",
series = "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2022",
address = "United States",
}