Comprehensive investigation of on-state stress on D-mode AlGaN/GaN MIS-HEMTs

Tian-Li Wu, Denis Marcon, Mohammed B. Zahid, Marleen Van Hove, Stefaan Decoutere, Guido Groeseneken

研究成果: Conference contribution同行評審

48 引文 斯高帕斯(Scopus)

摘要

This paper reports on a comprehensive on-state reliability evaluation on depletion-mode (VTH∼-4V) AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors (MIS-HEMTs) with a bi-layer dielectric (in-situ Si3N4/Al2O3). We have studied the strength and the lifetime of the dielectric to breakdown by means of a Time Dependent Dielectric Breakdown (TDDB) experiment performed at 200°C and the trapping effects induced by applying a positive gate voltage stress. Additionally, for the first time, we have studied the effect of the on-state stress as a function of the drain voltage. The results show that 1) Based on a Time Dependent Dielectric Breakdown (TDDB) evaluation, an applied gate voltage stress of +6V for the lifetime of 20 years can be extrapolated at 200°C. 2) By fitting with a power law, applying +1V gate voltage for 20 years leads to a threshold voltage shift of 0.2V. This guarantees a good reliability margin when these devices are used in cascode switching circuit applications. 3) A new mechanism of high junction temperature thermal de-trapping was observed during a high drain bias stress.

原文English
主出版物標題2013 IEEE International Reliability Physics Symposium, IRPS 2013
頁面3C.5.1-3C.5.7
DOIs
出版狀態Published - 2013
事件2013 IEEE International Reliability Physics Symposium, IRPS 2013 - Monterey, CA, United States
持續時間: 14 4月 201318 4月 2013

出版系列

名字IEEE International Reliability Physics Symposium Proceedings
ISSN(列印)1541-7026

Conference

Conference2013 IEEE International Reliability Physics Symposium, IRPS 2013
國家/地區United States
城市Monterey, CA
期間14/04/1318/04/13

指紋

深入研究「Comprehensive investigation of on-state stress on D-mode AlGaN/GaN MIS-HEMTs」主題。共同形成了獨特的指紋。

引用此