@article{5d45717a31b44d79b73b919886ee6731,
title = "Comprehensive High-Voltage Parameter Extraction Strategy for BSIM-BULK HV Model",
abstract = "In this work, parameter extraction methodology for the BSIM industry standard high-voltage (HV) device compact model is presented. An extraction procedure covers entire range of operation, including weak inversion to strong inversion region, low and high drain biases, and multiple body biases with temperature effects. The extraction procedure is validated with experimental and numerical simulation data for several configurations of HV devices, including geometric variations.",
keywords = "BSIM-BULK, Doping, Logic gates, Parameter extraction, parameter extraction, quasi-saturation, Resistance, semiconductor device modeling, Semiconductor device modeling, Semiconductor process modeling, velocity saturation, Voltage",
author = "Garima Gill and Yogendra Machhiwar and Girish Pahwa and Chenming Hu and Harshit Agarwal",
note = "Publisher Copyright: IEEE",
year = "2023",
doi = "10.1109/TED.2023.3257121",
language = "English",
pages = "1--7",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
}