Comprehensive examination of intrinsic-parameter-induced characteristic fluctuations in 16-nm-gate CMOS devices

Ming Hung Han*, Yiming Li, Kuo Fu Lee, Hui Wen Cheng, Zhong Cheng Su

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

Intrinsic parameter fluctuations on device characteristic and yield are crucial in determining the operation of nanoscale semiconductor devices. In this paper, we examine the fluctuations of the threshold voltage (Vth), gate capacitance (Cg), and cutoff frequency (FT) of emerging metal/high-κ gate planar complementary metal-oxide-semiconductor (CMOS) field effect transistors (FETs) variability including metal-gate-workfunction fluctuation (WKF), random-dopant fluctuation (RDF), and process-variation effect (PVE). An experimentally validated 3D "atomistic" simulation allows us to investigate the effect of aforementioned fluctuation sources on device DC/AC property. The preliminary results show that RDF and WKF dominate the device DC characteristics for n-type MOSFET (NMOS) and p-type MOSFET (PMOS), respectively. PVE affects CMOS device AC characteristics, especially at high gate bias.

原文English
主出版物標題Nanotechnology 2010
主出版物子標題Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - Technical Proceedings of the 2010 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2010
頁面21-24
頁數4
出版狀態Published - 6月 2010
事件Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2010 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2010 - Anaheim, CA, United States
持續時間: 21 6月 201024 6月 2010

出版系列

名字Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - Technical Proceedings of the 2010 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2010
2

Conference

ConferenceNanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2010 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2010
國家/地區United States
城市Anaheim, CA
期間21/06/1024/06/10

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