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Comprehensive Analysis on Electrical Characteristics of Pi-Gate Poly-Si Junctionless FETs
Dong Ru Hsieh
, Jer Yi Lin
, Po Yi Kuo
,
Tien-Sheng Chao
*
*
此作品的通信作者
電子物理學系
研究成果
:
Article
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14
引文 斯高帕斯（Scopus）
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Keyphrases
3D IC
16%
Carrier Concentration
16%
Carrier Mobility
16%
Channel Dimensions
16%
Channel Thickness
16%
Channel Width
33%
Circuit Application
16%
Crystallinity
16%
Current-voltage
16%
Drive Current
16%
Electrical Characteristics
100%
Film Thickness
16%
Finned Channel
16%
High Aspect Ratio
16%
High-speed Applications
16%
In Situ
16%
Junctionless FET
100%
Low Power
16%
On-off Ratio
16%
On-state Current
16%
Pi-gate
100%
Poly-Si
100%
Poly-Si Film
33%
Si Fin
16%
Steep Subthreshold Swing
16%
Subthreshold Activity
33%
Threshold Voltage
33%
Engineering
Application Performance
16%
Carrier Concentration
16%
Carrier Mobility
16%
Channel Dimension
16%
Crystallinity
16%
Current Ratio
16%
Field Effect Transistor
100%
High Aspect Ratio
16%
Integrated Circuit
16%
Polysilicon
100%
Promising Candidate
16%
Material Science
Carrier Concentration
16%
Carrier Mobility
16%
Electrical Property
100%
Electronic Circuit
16%
Field Effect Transistor
100%
Film
16%
Film Thickness
16%