Comprehensive Analysis on Electrical Characteristics of Pi-Gate Poly-Si Junctionless FETs

Keyphrases

• Poly-Si 100%
• Electrical Characteristics 100%
• Junctionless FET 100%
• Pi-gate 100%
• Poly-Si Film 33%
• Threshold Voltage 33%
• Channel Width 33%
• Subthreshold Activity 33%
• In Situ 16%
• On-state Current 16%
• Crystallinity 16%
• Film Thickness 16%
• Si Fin 16%
• Current-voltage 16%
• Low Power 16%
• 3D IC 16%
• Drive Current 16%
• Carrier Mobility 16%
• Carrier Concentration 16%
• High-speed Applications 16%
• Circuit Application 16%
• On-off Ratio 16%
• Steep Subthreshold Swing 16%
• Channel Dimensions 16%
• High Aspect Ratio 16%
• Channel Thickness 16%
• Finned Channel 16%

Engineering

• Field Effect Transistor 100%
• Polysilicon 100%
• Crystallinity 16%
• Current Ratio 16%
• High Aspect Ratio 16%
• Channel Dimension 16%
• Promising Candidate 16%
• Application Performance 16%
• Integrated Circuit 16%
• Carrier Mobility 16%
• Carrier Concentration 16%

Material Science

• Electrical Property 100%
• Field Effect Transistor 100%
• Film 16%
• Film Thickness 16%
• Electronic Circuit 16%
• Carrier Concentration 16%
• Carrier Mobility 16%