摘要
We report here on the synthesis of large crystals of Si-containing carbon nitride, consisting of a predominantly C-N network, by microwave CVD. The Si content in this material varies from crystal to crystal and also with the deposition conditions and has been observed to be as low as less than 5 at. % in some crystals, wherein the Si atoms are believed to substitute for some of the C sites only. This is the first time that such large and well-faceted crystals consisting almost entirely of carbon-nitride network have been synthesized. Moreover, there is no obvious deposition of amorphous CN material.
原文 | English |
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頁(從 - 到) | 322-325 |
頁數 | 4 |
期刊 | Journal of Materials Research |
卷 | 12 |
發行號 | 2 |
DOIs | |
出版狀態 | Published - 1 1月 1997 |