TY - JOUR
T1 - Composition control in the growth of AlAs1-xSbx alloys
AU - Ou, Jehn
AU - Chen, Wei-Kuo
PY - 1995/5/9
Y1 - 1995/5/9
N2 - The deposition of AlAs1-xSbx films was studied using metalorganic vapor phase epitaxy. The composition of the alloys was found to be strongly dependent on the growth temperature. High concentration of solid Sb was achieved at elevated temperatures. For films grown at 600 °C, the AlAs content in AlAsSb was simply determined by the input gas ration of [TBAs]/[TMAl] as the Sb reactant was supplied sufficiently. Owing to the sensitivity of Sb mole flow rate to solid composition at this particular growth environment, the result was accounted for by thermodynamic arguments. An improved film controllability was achieved for the growth of AlAs1-xSbx compounds.
AB - The deposition of AlAs1-xSbx films was studied using metalorganic vapor phase epitaxy. The composition of the alloys was found to be strongly dependent on the growth temperature. High concentration of solid Sb was achieved at elevated temperatures. For films grown at 600 °C, the AlAs content in AlAsSb was simply determined by the input gas ration of [TBAs]/[TMAl] as the Sb reactant was supplied sufficiently. Owing to the sensitivity of Sb mole flow rate to solid composition at this particular growth environment, the result was accounted for by thermodynamic arguments. An improved film controllability was achieved for the growth of AlAs1-xSbx compounds.
UR - http://www.scopus.com/inward/record.url?scp=0029217602&partnerID=8YFLogxK
U2 - 10.1109/ICIPRM.1995.522102
DO - 10.1109/ICIPRM.1995.522102
M3 - Conference article
AN - SCOPUS:0029217602
SN - 1092-8669
SP - 157
EP - 160
JO - Conference Proceedings - International Conference on Indium Phosphide and Related Materials
JF - Conference Proceedings - International Conference on Indium Phosphide and Related Materials
M1 - 522102
T2 - Proceedings of the 7th International Conference on Indium Phosphide and Related Materials
Y2 - 9 May 1995 through 13 May 1995
ER -