The deposition of AlAs1-xSbx films was studied using metalorganic vapor phase epitaxy. The composition of the alloys was found to be strongly dependent on the growth temperature. High concentration of solid Sb was achieved at elevated temperatures. For films grown at 600 °C, the AlAs content in AlAsSb was simply determined by the input gas ration of [TBAs]/[TMAl] as the Sb reactant was supplied sufficiently. Owing to the sensitivity of Sb mole flow rate to solid composition at this particular growth environment, the result was accounted for by thermodynamic arguments. An improved film controllability was achieved for the growth of AlAs1-xSbx compounds.
|頁（從 - 到）||157-160|
|期刊||Conference Proceedings - International Conference on Indium Phosphide and Related Materials|
|出版狀態||Published - 9 5月 1995|
|事件||Proceedings of the 7th International Conference on Indium Phosphide and Related Materials - Sapporo, Jpn|
持續時間: 9 5月 1995 → 13 5月 1995