@inproceedings{7ed5da2b39574d39b8ecb690a9c2d084,
title = "Complementary substrate-triggered SCR devices for on-chip ESD protection circuits",
abstract = "The turn-on mechanism of SCR device is essentially a current triggering event. While a current is applied to the base or substrate of a SCR device, it can be quickly triggered on into its latching state. In this paper, the complementary substrate-triggered SCR devices, which are combined with the substrate-triggered technique and SCR devices, are first reported in the literature for using in the on-chip ESD protection circuits. A complementary style on the substrate-triggered SCR devices is designed to discharge both of the positive and negative ESD stresses on the pad. The total holding voltage of the substrate-triggered SCR device can be increased by adding the stacked diode string to avoid the transient-induced latchup issue in the ESD protection circuits. The on-chip ESD protection circuits designed with the proposed complementary substrate-triggered SCR devices for the I/O pad and power pad have been successfully verified in a 0.25-μm STI CMOS process with the HBM (MM) ESD level of >8kV (650V) in a small layout area.",
author = "Ming-Dou Ker and Hsu, {Kuo Chun}",
year = "2002",
month = jan,
day = "1",
doi = "10.1109/ASIC.2002.1158061",
language = "English",
series = "Proceedings of the Annual IEEE International ASIC Conference and Exhibit",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "229--233",
editor = "John Chickanosky and Krishnamurthy, {Ram K.} and P.R. Mukund",
booktitle = "Proceedings - 15th Annual IEEE International ASIC/SOC Conference, ASIC/SOC 2002",
address = "United States",
note = "15th Annual IEEE International ASIC/SOC Conference, ASIC/SOC 2002 ; Conference date: 25-09-2002 Through 28-09-2002",
}