Complementary metal-oxide-silicon field-effect transistors fabricated in 4-MeV boron-implanted silicon

K. W. Terrill*, P. F. Byrne, Chen-Ming Hu, N. W. Cheung

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14 引文 斯高帕斯(Scopus)

摘要

Boron was implanted into p-type (100) silicon at an energy of 4 MeV to create a layer of heavily doped silicon centered at a depth of 5.2 μm below the surface. Both n-channel and p-channel metal-oxide-silicon, field-effect transistors (MOSFET's) and various diode structures were fabricated over this implanted region by using a 3-μm complementary MOSFET (CMOS) technology. The results show that the implanted silicon is recrystallized to a device quality state. No increase in diode leakage or degradation in MOSFET device characteristics is observed. Experimental results show that this subdevice buried layer leads to a reduction of CMOS latch-up susceptibility.

原文English
頁(從 - 到)977-979
頁數3
期刊Applied Physics Letters
45
發行號9
DOIs
出版狀態Published - 1 12月 1984

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