Complementary carbon nanotube-gated carbon nanotube thin-film transistor

Bae Horng Chen, Horng-Chih Lin, Tiao Yuan Huang, Jeng Hua Wei, Hung Hsiang Wang, Ming Jinn Tsai, Tien-Sheng Chao*

*此作品的通信作者

研究成果: Article同行評審

18 引文 斯高帕斯(Scopus)

摘要

We introduce, a complementary carbon nanotube (CNT)-gated CNT thin-film field effect transistor (FET). By using two perpendicularly crossed single-wall CNT (SWNT) bundles as the gate and the channel interchangeably, a sub- 50 nm complementary CNT-FET is demonstrated. It is found that the new CNT-FET shows acceptable FET characteristics by interchanging the roles of the gate and the channel. The unique dual functionality of the device will open up a new possibility and flexibility in the design of future complementary CNT electronic circuits.

原文English
文章編號093502
期刊Applied Physics Letters
88
發行號9
DOIs
出版狀態Published - 27 2月 2006

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