Comparisons of Performance and Reliability in 4H-SiC Tri-gate and Planar MOSFETs

Keyphrases

• Planar MOSFET 100%
• Tri-gate MOSFET 100%
• Performance Comparison 100%
• 4H-SiC 100%
• Triplanar 100%
• Sidewall 66%
• Low Voltage 33%
• Channel Length 33%
• Tri-gate 33%
• Channel Mobility 33%
• Gate Voltage 33%
• Effective Channel Width 33%
• Electron Transfer Channel 33%
• Dynamic RON 33%
• A-face 33%
• Planar-gate MOSFET 33%

Engineering

• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Side Wall 66%
• Experimental Result 33%
• Channel Length 33%
• Effective Channel 33%
• Gate Voltage 33%
• Electron Channel 33%