Comparisons of Performance and Reliability in 4H-SiC Tri-gate and Planar MOSFETs

Jia Wei Hu*, Tsung Yuan Lu, Kuan Min Kang, Chih Fang Huang, Bang Ren Chen, Tian Li Wu

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

In this work, a low-voltage tri-gate MOSFET in 4H-SiC is fabricated and measured to compare its performance with a planar gate MOSFET with the same channel length. The preliminary reliability of the devices is also studied. Experimental results show that the larger effective channel width enhances the current of the tri-gate contributed from the trench sidewall and the higher electron channel mobility on the a-face of 4H-SiC pm the sidewall, even though the gate voltage is limited at a lower value. PBTI, NBTI, and dynamic Ron are also measured and the results show that the reliability of both devices are comparable.

原文English
主出版物標題WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9798350337112
DOIs
出版狀態Published - 2023
事件2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2023 - Hsinchu, Taiwan
持續時間: 27 8月 202329 8月 2023

出版系列

名字WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia

Conference

Conference2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2023
國家/地區Taiwan
城市Hsinchu
期間27/08/2329/08/23

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