@inproceedings{1dfe4f4b8e9c4c6f866fbbc5b204c9ff,
title = "Comparisons of Performance and Reliability in 4H-SiC Tri-gate and Planar MOSFETs",
abstract = "In this work, a low-voltage tri-gate MOSFET in 4H-SiC is fabricated and measured to compare its performance with a planar gate MOSFET with the same channel length. The preliminary reliability of the devices is also studied. Experimental results show that the larger effective channel width enhances the current of the tri-gate contributed from the trench sidewall and the higher electron channel mobility on the a-face of 4H-SiC pm the sidewall, even though the gate voltage is limited at a lower value. PBTI, NBTI, and dynamic Ron are also measured and the results show that the reliability of both devices are comparable.",
keywords = "4H-SiC, bias-temperature stress, MOSFET, reliability, tri-gate",
author = "Hu, {Jia Wei} and Lu, {Tsung Yuan} and Kang, {Kuan Min} and Huang, {Chih Fang} and Chen, {Bang Ren} and Wu, {Tian Li}",
note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2023 ; Conference date: 27-08-2023 Through 29-08-2023",
year = "2023",
doi = "10.1109/WiPDAAsia58218.2023.10261921",
language = "English",
series = "WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia",
address = "美國",
}