Comparison of ultrathin CoTiO3 and NiTiO3 high-k gate dielectrics

Tung Ming Pan; Tan Fu Lei; Tien-Sheng Chao

doi:10.1063/1.1347405

Comparison of ultrathin CoTiO₃ and NiTiO₃ high-k gate dielectrics

Tung Ming Pan^*, Tan Fu Lei, Tien-Sheng Chao

^*此作品的通信作者

電子物理學系

研究成果: Article › 同行評審

28 引文斯高帕斯（Scopus）

摘要

High-k cobalt-titanium oxide (CoTiO₃) and nickel-titanium oxide (NiTiO₃) were formed by directly oxidizing sputtered Co/Ti and Ni/Ti film. Al/CoTiO₃/Si₃N₄/Si and Al/NiTiO₃/Si₃N₄/Si capacitor structures were fabricated and measured. The effective dielectric constant (k values≅45) with buffer layer for CoTiO₃ is larger than that of NiTiO₃. In addition, CoTiO₃ depicts excellent electrical properties at the same time. This metal oxide thus appears to be a very promising high-k gate dielectric for future ultralarge scale integrated devices.

原文	English
頁（從 - 到）	3447-3452
頁數	6
期刊	Journal of Applied Physics
卷	89
發行號	6
DOIs	https://doi.org/10.1063/1.1347405
出版狀態	Published - 15 3月 2001

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@article{b8253bf6dad34c7cbc93e81b94c25bfb,

title = "Comparison of ultrathin CoTiO3 and NiTiO3 high-k gate dielectrics",

abstract = "High-k cobalt-titanium oxide (CoTiO3) and nickel-titanium oxide (NiTiO3) were formed by directly oxidizing sputtered Co/Ti and Ni/Ti film. Al/CoTiO3/Si3N4/Si and Al/NiTiO3/Si3N4/Si capacitor structures were fabricated and measured. The effective dielectric constant (k values≅45) with buffer layer for CoTiO3 is larger than that of NiTiO3. In addition, CoTiO3 depicts excellent electrical properties at the same time. This metal oxide thus appears to be a very promising high-k gate dielectric for future ultralarge scale integrated devices.",

author = "Pan, {Tung Ming} and Lei, {Tan Fu} and Tien-Sheng Chao",

year = "2001",

month = mar,

day = "15",

doi = "10.1063/1.1347405",

language = "English",

volume = "89",

pages = "3447--3452",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "6",

}

TY - JOUR

T1 - Comparison of ultrathin CoTiO3 and NiTiO3 high-k gate dielectrics

AU - Pan, Tung Ming

AU - Lei, Tan Fu

AU - Chao, Tien-Sheng

PY - 2001/3/15

Y1 - 2001/3/15

N2 - High-k cobalt-titanium oxide (CoTiO3) and nickel-titanium oxide (NiTiO3) were formed by directly oxidizing sputtered Co/Ti and Ni/Ti film. Al/CoTiO3/Si3N4/Si and Al/NiTiO3/Si3N4/Si capacitor structures were fabricated and measured. The effective dielectric constant (k values≅45) with buffer layer for CoTiO3 is larger than that of NiTiO3. In addition, CoTiO3 depicts excellent electrical properties at the same time. This metal oxide thus appears to be a very promising high-k gate dielectric for future ultralarge scale integrated devices.

AB - High-k cobalt-titanium oxide (CoTiO3) and nickel-titanium oxide (NiTiO3) were formed by directly oxidizing sputtered Co/Ti and Ni/Ti film. Al/CoTiO3/Si3N4/Si and Al/NiTiO3/Si3N4/Si capacitor structures were fabricated and measured. The effective dielectric constant (k values≅45) with buffer layer for CoTiO3 is larger than that of NiTiO3. In addition, CoTiO3 depicts excellent electrical properties at the same time. This metal oxide thus appears to be a very promising high-k gate dielectric for future ultralarge scale integrated devices.

UR - http://www.scopus.com/inward/record.url?scp=0039189606&partnerID=8YFLogxK

U2 - 10.1063/1.1347405

DO - 10.1063/1.1347405

M3 - Article

AN - SCOPUS:0039189606

SN - 0021-8979

VL - 89

SP - 3447

EP - 3452

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 6

ER -

Comparison of ultrathin CoTiO3 and NiTiO3 high-k gate dielectrics

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Comparison of ultrathin CoTiO₃ and NiTiO₃ high-k gate dielectrics