摘要
It is well established that near-noble metals and refractory metals form two distinct classes of silicide contacts with silicon. Rare earth metals have been studied in the same manner and found to form a new class that is very distinct from the other two in terms of properties and characteristics. Some of these characteristics are the formation of a disilicide phase, as an apparently first and last phase, at a surprisingly low temperature (250-400 °C). Marker motion study using implanted krypton and argon showed silicon to be the dominant diffusing species for ErSi2. The Schottky barrier height to n-Si is 0.40 ± 0.04 e V and to p-Si is 0.70 ± 0.04 e V for all six of the metals studied. The surface morphology after reaction indicates the formation of a tensile stress by the silicide reaction. Oxidation of the rare earth metals is a severe problem although a variety of passivation schemes have been shown to work.
原文 | English |
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頁(從 - 到) | 265-274 |
頁數 | 10 |
期刊 | Thin Solid Films |
卷 | 93 |
發行號 | 3-4 |
DOIs | |
出版狀態 | Published - 23 7月 1982 |