Comparison of performance in GaN-HEMTs on thin SiC substrate and sapphire substrates

Keyphrases

• 4H-SiC Substrates 33%
• AFM Analysis 33%
• Baliga's Figure of Merit 33%
• DC Current 33%
• Device Performance 33%
• Drain Spacing 33%
• Electrical Properties 33%
• GaN HEMT 100%
• GaN-based 33%
• Grain Boundary 33%
• High Electron Mobility Transistor 33%
• In Situ TEM 33%
• MCM2 66%
• Morphological Abnormalities 33%
• N-SiC 33%
• N-Type 4H-SiC 33%
• Off-state Breakdown Voltage 33%
• Performance Comparison 100%
• Sapphire 33%
• Sapphire Substrate 100%
• SEM Analysis 33%
• SiC Substrate 100%
• Structural Disparities 33%
• Surface Roughness 33%
• Three-terminal 33%
• Valuable Insight 33%
• XRD Analysis 33%

Material Science

• Electron Mobility 25%
• Grain Boundary 25%
• Morphology 25%
• Sapphire 100%
• Scanning Electron Microscopy 25%
• Surface Roughness 25%
• Transistor 25%
• X-Ray Diffraction 50%

Engineering

• Breakdown Voltage 33%
• Device Performance 33%
• Direct Current 33%
• Drain Spacing 33%
• Figure of Merit 33%
• Sapphire Substrate 100%