Comparison of oxide breakdown progression in ultra-thin oxide SOI and bulk pMOSFETs

C. T. Chan*, C. H. Kuo, C. J. Tang, M. C. Chen, Ta-Hui Wang, S. Huang Lu, H. C. Hu, T. F. Chen, C. K. Yang, M. T. Lee, D. Y. Wu, J. K. Chen, S. C. Chien, S. W. Sun

*此作品的通信作者

    研究成果: Paper同行評審

    摘要

    Accelerated oxide breakdown progression in ultra-thin oxide (1.4nm) SOI pMOSFETs is observed, as compared to bulk devices. The accelerated progression is explained by the increase of hole stress current as a result of breakdown induced channel carrier heating in a floating-body configuration. Numerical simulation of hole tunneling current and hot carrier luminescence measurement are carried out to justify the proposed theory.

    原文English
    頁面49-52
    頁數4
    DOIs
    出版狀態Published - 1 12月 2004
    事件Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004 - , Taiwan
    持續時間: 5 7月 20048 7月 2004

    Conference

    ConferenceProceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004
    國家/地區Taiwan
    期間5/07/048/07/04

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