Comparison of novel cleaning solutions with various chelating agents for post-CMP cleaning on poly-Si film

Tung Ming Pan; Tan Fu Lei; Fu-Hsiang Ko; Tien-Sheng Chao; Tzu Huan Chiu; Ying Hao Lee; Chih Peng Lu

doi:10.1109/66.964323

Comparison of novel cleaning solutions with various chelating agents for post-CMP cleaning on poly-Si film

Tung Ming Pan^*, Tan Fu Lei, Fu-Hsiang Ko, Tien-Sheng Chao, Tzu Huan Chiu, Ying Hao Lee, Chih Peng Lu

^*此作品的通信作者

研究成果: Article › 同行評審

14 引文斯高帕斯（Scopus）

摘要

In this study, various cleaning solutions containing chelating agents with carboxyl acid group (-COOH), such as ethylenediaminetetraacetic acid, citric acid and oxalic acid, were developed for post-poly-Si CMP cleaning. The chelating agent and tetramethylammonium hydroxide (TMAH) were simultaneously added into 2% ammonium hydroxide alkaline solution to promote the removal efficiency on particles and metallic impurities. The effectiveness of various cleaning recipes and their interaction mechanism with poly-Si surface were studied. We could explain the surface behavior of various cleaning solutions by the different molecular size and charge of chelating agents. Based on the mechanism, the behavior of surface particle and metallic impurity can be realized. The co-existence of TMAH with citric acid or oxalic acid in the alkaline cleaning solutions can significantly enhance the electrical property for the capacitor.

原文	English
文章編號	964323
頁（從 - 到）	365-371
頁數	7
期刊	IEEE Transactions on Semiconductor Manufacturing
卷	14
發行號	4
DOIs	https://doi.org/10.1109/66.964323
出版狀態	Published - 1 11月 2001

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title = "Comparison of novel cleaning solutions with various chelating agents for post-CMP cleaning on poly-Si film",

abstract = "In this study, various cleaning solutions containing chelating agents with carboxyl acid group (-COOH), such as ethylenediaminetetraacetic acid, citric acid and oxalic acid, were developed for post-poly-Si CMP cleaning. The chelating agent and tetramethylammonium hydroxide (TMAH) were simultaneously added into 2% ammonium hydroxide alkaline solution to promote the removal efficiency on particles and metallic impurities. The effectiveness of various cleaning recipes and their interaction mechanism with poly-Si surface were studied. We could explain the surface behavior of various cleaning solutions by the different molecular size and charge of chelating agents. Based on the mechanism, the behavior of surface particle and metallic impurity can be realized. The co-existence of TMAH with citric acid or oxalic acid in the alkaline cleaning solutions can significantly enhance the electrical property for the capacitor.",

keywords = "CMP, Chelating agents, Citric acid, EDTA, Oxalic acid, Particles and metallic impurities, TMAH",

author = "Pan, {Tung Ming} and Lei, {Tan Fu} and Fu-Hsiang Ko and Tien-Sheng Chao and Chiu, {Tzu Huan} and Lee, {Ying Hao} and Lu, {Chih Peng}",

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AU - Pan, Tung Ming

AU - Lei, Tan Fu

AU - Ko, Fu-Hsiang

AU - Chao, Tien-Sheng

AU - Chiu, Tzu Huan

AU - Lee, Ying Hao

AU - Lu, Chih Peng

PY - 2001/11/1

Y1 - 2001/11/1

N2 - In this study, various cleaning solutions containing chelating agents with carboxyl acid group (-COOH), such as ethylenediaminetetraacetic acid, citric acid and oxalic acid, were developed for post-poly-Si CMP cleaning. The chelating agent and tetramethylammonium hydroxide (TMAH) were simultaneously added into 2% ammonium hydroxide alkaline solution to promote the removal efficiency on particles and metallic impurities. The effectiveness of various cleaning recipes and their interaction mechanism with poly-Si surface were studied. We could explain the surface behavior of various cleaning solutions by the different molecular size and charge of chelating agents. Based on the mechanism, the behavior of surface particle and metallic impurity can be realized. The co-existence of TMAH with citric acid or oxalic acid in the alkaline cleaning solutions can significantly enhance the electrical property for the capacitor.

AB - In this study, various cleaning solutions containing chelating agents with carboxyl acid group (-COOH), such as ethylenediaminetetraacetic acid, citric acid and oxalic acid, were developed for post-poly-Si CMP cleaning. The chelating agent and tetramethylammonium hydroxide (TMAH) were simultaneously added into 2% ammonium hydroxide alkaline solution to promote the removal efficiency on particles and metallic impurities. The effectiveness of various cleaning recipes and their interaction mechanism with poly-Si surface were studied. We could explain the surface behavior of various cleaning solutions by the different molecular size and charge of chelating agents. Based on the mechanism, the behavior of surface particle and metallic impurity can be realized. The co-existence of TMAH with citric acid or oxalic acid in the alkaline cleaning solutions can significantly enhance the electrical property for the capacitor.

KW - CMP

KW - Chelating agents

KW - Citric acid

KW - EDTA

KW - Oxalic acid

KW - Particles and metallic impurities

KW - TMAH

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ER -

Comparison of novel cleaning solutions with various chelating agents for post-CMP cleaning on poly-Si film

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