Comparison of Ni-metal induced lateral crystallization thin-film transistors fabricated by rapid thermal annealing and conventional furnace annealing at 565 °C

Chen-Ming Hu*, Yew-Chuhg Wu, Jun Wei Gong

*此作品的通信作者

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

Two annealing methods, pulse rapid thermal annealing (RTA) and conventional furnace annealing (CFA), were used to fabricate nickel-induced lateral crystallization (NILC) polycrystalline silicon (poly-Si) at 565 °C. It was found that the growth rate of RTA-POLY was 5 times higher than that of CFA-POLY. The performance of RTA-thin-film transistors (TFTs) was not as good as that of CFA-TFT. RTA-TFT showed lower drain current, higher threshold voltage, larger subthreshold swing, lower electron mobility, and lower leakage current than CFA-TFT.

原文English
頁(從 - 到)7204-7207
頁數4
期刊Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
46
發行號11
DOIs
出版狀態Published - 6 11月 2007

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