Comparison of Intrinsic Gettering and Epitaxial Wafers in Terms of Soft Error Endurance and Other Characteristics of 64k Bit Dynamic RAM

Hiroshi Iwai, Hideo Otsuka, Yasuo Matsumotc, Kiyoshi Hisatomi, Kyoji Aoki

研究成果: Article同行評審

7 引文 斯高帕斯(Scopus)

摘要

Intrinsic gettering (1G) and P/P+ epitaxial wafers are compared in terms of soft error endurance and other characteristics of a 64k bit dynamic RAM. It was confirmed that soft error rate is improved in IG wafers, while it is deteriorated in P/P+ epitaxial wafers. However, when epitaxial layer thickness is reduced to a certain value, the soft error rate tends to be improved. Several other characteristics of 64k bit DRAM's were also evaluated for devices made on IG and epitaxial wafers with various denuded zone (DZ) widths and epitaxial layer thicknesses, respectively.

原文English
頁(從 - 到)1149-1151
頁數3
期刊IEEE Transactions on Electron Devices
31
發行號9
DOIs
出版狀態Published - 9月 1984

指紋

深入研究「Comparison of Intrinsic Gettering and Epitaxial Wafers in Terms of Soft Error Endurance and Other Characteristics of 64k Bit Dynamic RAM」主題。共同形成了獨特的指紋。

引用此