Comparison of intersubband GaAs/AℓGaAs multiple quantum well infrared photodetectors on GaAs and GaAs-on-Si substrates

Deepak K. Sengupta, Sarath D. Gunapala, Thomas George, Sumith V. Bandara, C. N. Chang-Chien, Rosa Leon, S. Kayali, Hao-Chung Kuo, Wei Chiao W. Fang, Hui C. Liu, Gregory E. Stillman

研究成果: Conference article同行評審

2 引文 斯高帕斯(Scopus)

摘要

We have successfully fabricated intersubband GaAs/AlGaAs quantum well infrared photodetectors grown on GaAs-on-Si substrate and evaluated their structural, electrical, and optical characteristics. We have found that the performance is comparable to a similar detector structure grown on a semi- insulating GaAs substrate. The results are promising for applications in the important 8 - 12 micrometer atmospheric window.

原文English
頁(從 - 到)410-422
頁數13
期刊Proceedings of SPIE - The International Society for Optical Engineering
3379
DOIs
出版狀態Published - 1 12月 1998
事件Infrared Detectors and Focal Plane Arrays V - Orlando, FL, United States
持續時間: 14 4月 199814 4月 1998

指紋

深入研究「Comparison of intersubband GaAs/AℓGaAs multiple quantum well infrared photodetectors on GaAs and GaAs-on-Si substrates」主題。共同形成了獨特的指紋。

引用此