@inproceedings{6641d4844da643b19e62939075acba87,
title = "Comparison of Experimentally Extracted Top and Edge Contact Resistivity by TLM Structure with Two-step Sulfurization Nb-Doped MoS2",
abstract = "In this work, we adopted two kinds of TLM structures to extract the top (vertical) and the edge (horizontal) contact resistances of Metal/MoS2 directly from experimental results. Novel two-step sulfurization scheme was conducted for forming Nb-doped MoS2 films on the sapphire substrate. We found the edge contact resistivity (ρC-edge) was almost 2 orders of magnitude lower than (ρC-top). Our approach seems to be a reliable and simple way to precisely determine the edge and top contact resistances of the Metal/2D contact.",
keywords = "2-step sulfurization, Metal/2D, MoS, Nb-doped, TLM, TMD, edge contact resistivity",
author = "Li, {Chi Feng} and Chung, {Yun Yan} and Lin, {Chao Ting} and Ho, {Yen Teng} and Chien, {Chao Hsin}",
note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 ; Conference date: 12-03-2019 Through 15-03-2019",
year = "2019",
month = mar,
doi = "10.1109/EDTM.2019.8731069",
language = "English",
series = "2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "191--193",
booktitle = "2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019",
address = "美國",
}