Comparison of copper interconnect electromigration behaviors in various structures for advanced BEOL technology

M. H. Lin*, Y. L. Lin, G. S. Yang, M. S. Yeh, K. P. Chang, K. C. Su, Ta-Hui Wang

*此作品的通信作者

    研究成果: Paper同行評審

    2 引文 斯高帕斯(Scopus)

    摘要

    Copper interconnect electromigration performance were examined in three low-k materials (k= 2.65 ∼ 3.6) using advanced BEOL technology. Comparable time to failure distribution were achieved after process optimization for each material. The Ea and n ranged from 0.8 to 0.9 eV and 1.1 to 1.4, respectively, are agreed well with the interface diffusion mechanism and a void nucleation mechanism. Various testing structures are designed to identify the EM failure modes. Extensive failure analysis was carried out to understand the failure phenomena of various test structures. Results of present study suggest that interface of Cu interconnects is the key factor for EM lifetime performance for advanced BEOL technology design rules. The weak links of interconnect system were also identified.

    原文English
    頁面177-180
    頁數4
    DOIs
    出版狀態Published - 2004
    事件Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004 - , Taiwan
    持續時間: 5 7月 20048 7月 2004

    Conference

    ConferenceProceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004
    國家/地區Taiwan
    期間5/07/048/07/04

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