Comparison of 1300 nm quantum well lasers using different material systems

Kuo-Jui Lin; C. P. Lee

doi:10.1023/A:1021386822847

Comparison of 1300 nm quantum well lasers using different material systems

Kuo-Jui Lin, C. P. Lee

電子研究所

研究成果: Article › 同行評審

20 引文斯高帕斯（Scopus）

摘要

The band structure and material gain are calculated for 1300-nm band quantum well lasers of GaInNAs, AlGaInAs and GaInAsP material systems. The material compositions for each system are carefully chosen for comparison. The calculated results show that the peak gain is around the same in spite of the difference in band structures for the three systems.

原文	English
頁（從 - 到）	1191-1200
頁數	10
期刊	Optical and Quantum Electronics
卷	34
發行號	12
DOIs	https://doi.org/10.1023/A:1021386822847
出版狀態	Published - 1月 2002

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title = "Comparison of 1300 nm quantum well lasers using different material systems",

abstract = "The band structure and material gain are calculated for 1300-nm band quantum well lasers of GaInNAs, AlGaInAs and GaInAsP material systems. The material compositions for each system are carefully chosen for comparison. The calculated results show that the peak gain is around the same in spite of the difference in band structures for the three systems.",

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AB - The band structure and material gain are calculated for 1300-nm band quantum well lasers of GaInNAs, AlGaInAs and GaInAsP material systems. The material compositions for each system are carefully chosen for comparison. The calculated results show that the peak gain is around the same in spite of the difference in band structures for the three systems.

KW - 1300-nm band

KW - Band offset ratio

KW - Band structure

KW - Material gain

KW - Quaternary material system

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Comparison of 1300 nm quantum well lasers using different material systems

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