TY - JOUR
T1 - Comparison in the performance of passive and active tft pixel sensing circuits using pin photodiode as the light sensing device
AU - Tu, Cheng Che
AU - Wu, Sin You
AU - Tai, Ya Hsiang
N1 - Publisher Copyright:
© 2021, John Wiley and Sons Inc. All rights reserved.
PY - 2021/2
Y1 - 2021/2
N2 - The large area TFT image sensors using PIN photodiode as the light sensing device attract attention owing to their application in optical fingerprint sensors under displays. Different structures of the pixel sensing circuits are compared in the aspect of output signal, settling time, photo current collection, as well as variation of TFT. Even though the active pixel sensing circuits (APS) are expected to provide better performance intuitively, the passive pixel sensing circuits (PPS) can surpass APS for practical purpose.
AB - The large area TFT image sensors using PIN photodiode as the light sensing device attract attention owing to their application in optical fingerprint sensors under displays. Different structures of the pixel sensing circuits are compared in the aspect of output signal, settling time, photo current collection, as well as variation of TFT. Even though the active pixel sensing circuits (APS) are expected to provide better performance intuitively, the passive pixel sensing circuits (PPS) can surpass APS for practical purpose.
KW - Author Thin-film transistor (TFT)
KW - Current-type active pixel sensing circuit (C-APS)
KW - Passive pixel sensing circuit (PPS)
KW - Voltage-type active pixel sensing circuit (V-APS)
UR - http://www.scopus.com/inward/record.url?scp=85114499369&partnerID=8YFLogxK
U2 - 10.1002/sdtp.14447
DO - 10.1002/sdtp.14447
M3 - Conference article
AN - SCOPUS:85114499369
SN - 0097-966X
VL - 52
SP - 253
EP - 256
JO - Digest of Technical Papers - SID International Symposium
JF - Digest of Technical Papers - SID International Symposium
IS - S1
T2 - International Conference on Display Technology, ICDT 2020
Y2 - 18 October 2020 through 21 October 2020
ER -