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Comparison between High-Holding-Voltage SCR and Stacked Low-Voltage Devices for ESD Protection in High-Voltage Applications
Chia Tsen Dai,
Ming-Dou Ker
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此作品的通信作者
電子研究所
神經調控醫療電子系統研究中心
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25
引文 斯高帕斯(Scopus)
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Keyphrases
Electrostatic Discharge (ESD) Protection
100%
High Voltage Application
100%
Silicon-controlled Rectifier
100%
High Holding Voltage
100%
Low Voltage Device
100%
Latch-up
75%
Bipolar-CMOS-DMOS (BCD) Process
50%
Holding Voltage
50%
Measurement Results
25%
P-type
25%
Low Voltage
25%
Electrostatic Discharge
25%
Circuit Application
25%
Current Gain
25%
Experimental Verification
25%
Bipolar Transistor
25%
Transmission Line Pulsing
25%
Joule Heating Effect
25%
High-voltage Device
25%
Engineering
Electrostatic Discharge
100%
Silicon-Controlled Rectifier
100%
Holding Voltage
100%
Experimental Result
25%
Bipolar Transistor
25%
Transients
25%
Electric Lines
25%
Current Gain
25%
Joule Heating Effect
25%
Free Design
25%
Earth and Planetary Sciences
Electrostatics
100%
Silicon Controlled Rectifier
100%
CMOS
50%
Transmission Line
25%
Junction Transistor
25%
Resistance Heating
25%
Physics
Electrostatics
100%
Transients
25%
Transmission Line
25%
Junction Transistor
25%