Comparison between extended microtunnels along different crystal orientations in GaN

Pei Lun Wu, Hsin Hsiung Huang*, Hung Yu Zeng, Po Chun Liu, Chih Ming Lai, Jeng Dar Tsay, Wei-I Lee


研究成果: Conference article同行評審


Triangular prism-like extended microtunnels (EMTs) can be easily formed in specially designed epitaxial lateral overgrowth GaN thick films by selective wet chemical etching in molten potassium hydroxide (KOH). In this study, extended microtunnels along the 〈1 100〉 and the 〈11 20〉 directions were fabricated and compared. If tunnels along the 〈1 100〉 direction, the {11 22} planes would be the etch stop plane. While the tunnels along 〈11 20〉 direction, the etch stop plane would become to {10 11} planes. The activation energies of wet chemical etch for the {11 22} planes and the {10 11} planes were determined to be 23.6 kcal/mol (1.02 eV) and 22.8 kcal/mol (0.99 eV) using Arrhenius plot. On the other hand, the etching depths of the tunnels along the 〈1 100〉 direction were more than twice the depths of the tunnels along the 〈11 20〉 direction during the same etching time. The highest etch rate of the tunnels along the axial direction can reach 1000 μm/hr in 〈1 100〉 direction, which is believed to be the highest etch rate of GaN ever reported. Additional crystal facet of m-plane in GaN was also observed in the sample with extended microtunnels along the 〈11 20〉 direction.

頁(從 - 到)1671-1674
期刊Physica Status Solidi (C) Current Topics in Solid State Physics
出版狀態Published - 1 12月 2008
事件7th International Conference of Nitride Semiconductors, ICNS-7 - Las Vegas, NV, United States
持續時間: 16 9月 200721 9月 2007


深入研究「Comparison between extended microtunnels along different crystal orientations in GaN」主題。共同形成了獨特的指紋。