Comparison between CVD and thermal oxide dielectric integrity

J. Lee, I. Chen, Chen-Ming Hu

研究成果: Article同行評審

36 引文 斯高帕斯(Scopus)

摘要

Low-pressure chemical vapor deposited (CVD) oxide and thermal oxide of identical thickness (360 A) are compared. CVD oxide exhibits much lower incidence of breakdown at the electric fields below 8 MV/cm, in agreement with the notion that the breakdown is largely due to the incorporation of impurities in the silicon substrate into the oxide during thermal oxidation. Furthermore, CVD oxide shows identical I-V characteristics as thermal oxide and significantly lower rates of electron and hole trapping. Based on these results, CVD oxide may be an intriguing candidate for thin dielectric applications.

原文English
頁(從 - 到)506-509
頁數4
期刊IEEE Electron Device Letters
7
發行號9
DOIs
出版狀態Published - 1 1月 1986

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