Comparing RTA and Laser SPE & LPE Annealing of Ge-epi with Si, Sn & C Implantation for Well Mobility/Strain Engineering

John Borland, Shang Shuin Chaung, Tseung-Yuen Tseng, Abhijeet Joshi, Bulent Basol, Yao Jen Lee, Takashi Kuroi, Gary Goodman, Nadya Khapochkina, Temel Buyuklimanli

研究成果: Conference contribution同行評審

摘要

For undoped <1E14/cm3 Silicon-Cz wafers, hole mobility (μ h ) is reported to be 480cm2/Vs while electron mobility (μ e ) is 3.5x higher at 1500cm 2/Vs and in Germanium-Cz wafers μ h is 4x higher at 2000cm2/Vs and μ e is 3.5x higher at 4800cm 2/Vs as shown in Fig. 1 [1]. When the doping level is increased to typical p-well and n-well doping levels of ~1E18/cm3, the mobility decreases in Si to μ h =150cm2/Vs and μ e =300cm2/Vs a decrease of 68% and 80% respectively while in Ge mobility decreases to μ h =400cm2/Vs and μ e =1000cm 2/Vs a decrease of 80% for both but compared to Si, an increase in μ h by 2.7x and μ e by 3.3x.

原文English
主出版物標題19th International Workshop on Junction Technology, IWJT 2019
發行者Institute of Electrical and Electronics Engineers Inc.
頁數4
ISBN(電子)978-4-86348-727-7
ISBN(列印)978-1-7281-3005-7
DOIs
出版狀態Published - 6 6月 2019
事件19th International Workshop on Junction Technology, IWJT 2019 - Kyoto, Japan
持續時間: 6 6月 20197 6月 2019

出版系列

名字19th International Workshop on Junction Technology, IWJT 2019

Conference

Conference19th International Workshop on Junction Technology, IWJT 2019
國家/地區Japan
城市Kyoto
期間6/06/197/06/19

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