Comparative DC characteristic analysis of AlGaN/GaN HEMTs grown on Si(111) and sapphire substrates by MBE

Partha Mukhopadhyay, Ankush Bag, Umesh Gomes, Utsav Banerjee, Saptarsi Ghosh, Sanjib Kabi, Edward Yi Chang, Amir Dabiran, Peter Chow, Dhrubes Biswas

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    Engineering & Materials Science

    Physics & Astronomy

    Chemical Compounds