摘要
In this article, we discuss a novel compact model to capture the double-hump characteristic in the substrate current versus gate voltage plot of a high-voltage device. An analytical expression for the electric field is derived by solving Poisson's equation at the drift-drain junction of the device, which is then incorporated in the final substrate current equation. The model is implemented in the Berkeley Short-channel IGFET Model-Bulk (BSIM-BULK) HV compact model and validated with numerical TCAD simulations and different experimental datasets.
原文 | English |
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頁(從 - 到) | 2389-2394 |
頁數 | 6 |
期刊 | IEEE Transactions on Electron Devices |
卷 | 70 |
發行號 | 5 |
DOIs | |
出版狀態 | Published - 1 5月 2023 |