Compact Modeling of Impact Ionization in High-Voltage Devices

Garima Gill*, Anant Singhal, Girish Pahwa, Chenming Hu, Harshit Agarwal

*此作品的通信作者

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

In this article, we discuss a novel compact model to capture the double-hump characteristic in the substrate current versus gate voltage plot of a high-voltage device. An analytical expression for the electric field is derived by solving Poisson's equation at the drift-drain junction of the device, which is then incorporated in the final substrate current equation. The model is implemented in the Berkeley Short-channel IGFET Model-Bulk (BSIM-BULK) HV compact model and validated with numerical TCAD simulations and different experimental datasets.

原文English
頁(從 - 到)2389-2394
頁數6
期刊IEEE Transactions on Electron Devices
70
發行號5
DOIs
出版狀態Published - 1 5月 2023

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