Compact Modeling of Emerging IC Devices for Technology-Design Co-development

G. Pahwa*, A. Dasgupta, C. T. Tung, M. Y. Kao, C. K. Dabhi, S. Sarker, S. Salahuddin, C. Hu

*此作品的通信作者

研究成果: Conference contribution同行評審

2 引文 斯高帕斯(Scopus)

摘要

This paper presents compact models of GAA, MRAM, ferroelectric logic, and memory devices, as well as cryogenic CMOS that supports quantum computing. These compact models achieve microseconds fast simulation of the charge and current of devices using analytical functions as solutions to complex device physics problems aided by adjustable parameters. Though not as predictive as TCAD, each model can simulate the characteristics and manufacturing variabilities of the device as accurately and much faster. Early availability of compact models of emerging devices is a necessity for technology-design co-development using these devices.

原文English
主出版物標題2022 International Electron Devices Meeting, IEDM 2022
發行者Institute of Electrical and Electronics Engineers Inc.
頁面811-814
頁數4
ISBN(電子)9781665489591
DOIs
出版狀態Published - 2022
事件2022 International Electron Devices Meeting, IEDM 2022 - San Francisco, United States
持續時間: 3 12月 20227 12月 2022

出版系列

名字Technical Digest - International Electron Devices Meeting, IEDM
2022-December
ISSN(列印)0163-1918

Conference

Conference2022 International Electron Devices Meeting, IEDM 2022
國家/地區United States
城市San Francisco
期間3/12/227/12/22

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