Compact modeling for RF and microwave integrated circuits

A. M. Niknejad*, M. Chan, Chen-Ming Hu, B. Brodersen, X. Xi, J. He, S. Emami, C. Doan, Y. Cao, Pin Su, H. Wan, M. Dunga, C. H. Lin

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

Compact modeling has been an integral part of the design of integrated circuits for digital and analog applications. The availability of scalable CMOS device models has enabled rapid simulation and design of present and future device technologies. Increasingly RF and microwave circuits designed with CMOS and SiGe technologies obviate the need for compact modeling in this domain. In this paper we will summarize the unique requirements of high-frequency compact modeling efforts by focusing on key components, such as passive devices, interconnect, substrate coupling, and active devices.

原文English
主出版物標題2003 Nanotechnology Conference and Trade Show - Nanotech 2003
編輯M. Laudon, B. Romanowicz
頁面294-297
頁數4
出版狀態Published - 2月 2003
事件2003 Nanotechnology Conference and Trade Show - Nanotech 2003 - San Francisco, CA, 美國
持續時間: 23 2月 200327 2月 2003

出版系列

名字2003 Nanotechnology Conference and Trade Show - Nanotech 2003
2

Conference

Conference2003 Nanotechnology Conference and Trade Show - Nanotech 2003
國家/地區美國
城市San Francisco, CA
期間23/02/0327/02/03

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