@inproceedings{1042f789553c4a8d8d8d10d770f5c554,
title = "Compact Modeling and Experimental Validation of Reverse Mode Impact Ionization in LDMOS Transistors within the BSIM-BULK Framework",
abstract = "This study introduces a compact model for reverse mode impact ionization current in Laterally-Diffused-Metal-Oxide-Semiconductor (LDMOS) transistors. Due to the asymmetrical nature of LDMOS transistors, magnitude of substrate current under forward (V_ds > 0V) and reverse (V_ds < 0V) modes can differ by orders of magnitude. We discuss the reverse impact ionization current model in this work which is then integrated into the BSIM-BULK high voltage compact model framework. The efficacy of the model is supported by calibrated TCAD simulations and model to hardware correlation is also presented.",
keywords = "BSIM-BULK, LDMOS, compact modeling, impact ionization, reverse mode",
author = "Zarkob, {Yawar Hayat} and Ayushi Sharma and Girish Pahwa and Debashish Nandi and Dabhi, {Chetan K.} and Volker Kubrak and Bob Peddenpohl and Mingchun Tang and Chenming Hu and Chauhan, {Yogesh Singh}",
note = "Publisher Copyright: {\textcopyright} 2024 IEEE.; 8th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2024 ; Conference date: 03-03-2024 Through 06-03-2024",
year = "2024",
doi = "10.1109/EDTM58488.2024.10512085",
language = "English",
series = "IEEE Electron Devices Technology and Manufacturing Conference: Strengthening the Globalization in Semiconductors, EDTM 2024",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "IEEE Electron Devices Technology and Manufacturing Conference",
address = "美國",
}