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Compact Ga-doped ZnO nanorod thin film for making high-performance transparent resistive switching memory
Chun Yang Huang
*
, Yen Ting Ho, Chung Jung Hung, Tseung-Yuen Tseng
*
此作品的通信作者
電子研究所
研究成果
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同行評審
39
引文 斯高帕斯(Scopus)
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Keyphrases
High Performance
100%
Resistive Random Access Memory (ReRAM)
100%
Nanorod Thin Films
100%
Doped ZnO Nanorods
100%
Ga-doped ZnO
100%
Memory Device
33%
Low Resistance State
33%
High Resistance State
33%
Nanostructured ZnO Films
33%
Grain Boundary
16%
Oxygen Vacancy
16%
Well-aligned
16%
Seed Layer
16%
Resistive Switching
16%
Memory Application
16%
Conductive Filament
16%
High Endurance
16%
Resistance Switching
16%
Fully Stable
16%
Fully Transparent
16%
Resistance Ratio
16%
Material Science
Thin Films
100%
Nanorod
100%
ZnO
100%
Indium Tin Oxide
60%
Resistive Random-Access Memory
30%
Film
20%
Oxygen Vacancy
10%
Grain Boundaries
10%
Physics
Thin Films
100%
ZnO Nanorods
100%
Resistive Switching
100%
Oxygen Vacancy
25%
Grain Boundaries
25%