摘要
Composite channel (In0.65Ga0.35As/InAs/ In0.65Ga0.35As) high electron mobility transistors (HEMTs) with π-gate structure were investigated for high-speed and low-power logic applications. The conventional and tri-gate MESA HEMTs were compared with the π-gate device for evaluation. The π-gate device exhibited the best maximum transconductance value of 1584 mS/mm, on-state current of 332mA/mm, subthreshold swing (SS) of 78.1 mV/decade, and ION/IOFF ratio of 3 × 104 at VDS = 0.5 V at room temperature. These results indicated that the designed π-gate InAs devices improve the electrical characteristics of InAs HEMTs for high-speed and low-power logic applications.
原文 | English |
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頁(從 - 到) | P319-P321 |
頁數 | 3 |
期刊 | ECS Journal of Solid State Science and Technology |
卷 | 8 |
發行號 | 6 |
DOIs | |
出版狀態 | Published - 7 6月 2019 |