Communication—Potential of the π-gate InAs HEMTs for high-speed and low-power logic applications

Jing Neng Yao*, Yueh Chin Lin, Ying Chieh Wong, Ting Jui Huang, Heng-Tung Hsu, Simon M. Sze, Edward Yi Chang

*此作品的通信作者

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

Composite channel (In0.65Ga0.35As/InAs/ In0.65Ga0.35As) high electron mobility transistors (HEMTs) with π-gate structure were investigated for high-speed and low-power logic applications. The conventional and tri-gate MESA HEMTs were compared with the π-gate device for evaluation. The π-gate device exhibited the best maximum transconductance value of 1584 mS/mm, on-state current of 332mA/mm, subthreshold swing (SS) of 78.1 mV/decade, and ION/IOFF ratio of 3 × 104 at VDS = 0.5 V at room temperature. These results indicated that the designed π-gate InAs devices improve the electrical characteristics of InAs HEMTs for high-speed and low-power logic applications.

原文English
頁(從 - 到)P319-P321
頁數3
期刊ECS Journal of Solid State Science and Technology
8
發行號6
DOIs
出版狀態Published - 7 6月 2019

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