Comment on 'Electron-phonon scattering in Sn-doped In2O 3 FET nanowires probed by temperature-dependent measurements'

Juhn-Jong Lin; Chih Yuan Wu

doi:10.1088/0957-4484/20/46/468001

Comment on 'Electron-phonon scattering in Sn-doped In2O 3 FET nanowires probed by temperature-dependent measurements'

Juhn-Jong Lin^*, Chih Yuan Wu

^*此作品的通信作者

物理研究所

研究成果: Comment/debate

摘要

We point out that the recently reported electrical quantities and transport behavior in a Sn-doped indium oxide FET nanowire (Berengue et al 2009 Nanotechnology 20 245706) should require serious reevaluation.

原文	English
文章編號	468001
頁數	1
期刊	Nanotechnology
卷	20
發行號	46
DOIs	https://doi.org/10.1088/0957-4484/20/46/468001
出版狀態	Published - 9 11月 2009

存取文件

10.1088/0957-4484/20/46/468001

其它文件與鏈接

Link to publication in Scopus

引用此

@article{dbe87f4fb7f740518c8aa38e2a5b0f3e,

title = "Comment on 'Electron-phonon scattering in Sn-doped In2O 3 FET nanowires probed by temperature-dependent measurements'",

abstract = "We point out that the recently reported electrical quantities and transport behavior in a Sn-doped indium oxide FET nanowire (Berengue et al 2009 Nanotechnology 20 245706) should require serious reevaluation.",

author = "Juhn-Jong Lin and Wu, {Chih Yuan}",

year = "2009",

month = nov,

day = "9",

doi = "10.1088/0957-4484/20/46/468001",

language = "English",

volume = "20",

journal = "Nanotechnology",

issn = "0957-4484",

publisher = "IOP Publishing Ltd.",

number = "46",

}

TY - JOUR

T1 - Comment on 'Electron-phonon scattering in Sn-doped In2O 3 FET nanowires probed by temperature-dependent measurements'

AU - Lin, Juhn-Jong

AU - Wu, Chih Yuan

PY - 2009/11/9

Y1 - 2009/11/9

N2 - We point out that the recently reported electrical quantities and transport behavior in a Sn-doped indium oxide FET nanowire (Berengue et al 2009 Nanotechnology 20 245706) should require serious reevaluation.

AB - We point out that the recently reported electrical quantities and transport behavior in a Sn-doped indium oxide FET nanowire (Berengue et al 2009 Nanotechnology 20 245706) should require serious reevaluation.

UR - http://www.scopus.com/inward/record.url?scp=70350651519&partnerID=8YFLogxK

U2 - 10.1088/0957-4484/20/46/468001

DO - 10.1088/0957-4484/20/46/468001

M3 - Comment/debate

C2 - 19843992

AN - SCOPUS:70350651519

SN - 0957-4484

VL - 20

JO - Nanotechnology

JF - Nanotechnology

IS - 46

M1 - 468001

ER -

Comment on 'Electron-phonon scattering in Sn-doped In2O 3 FET nanowires probed by temperature-dependent measurements'

摘要

存取文件

其它文件與鏈接

指紋

引用此